Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguideRIBOT, H; SANSONETTI, P; BRANDON, J et al.Applied physics letters. 1989, Vol 54, Num 6, pp 475-477, issn 0003-6951, 3 p.Article

Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowthWILT, D. P; LONG, J; DAUTREMONT-SMITH, W. C et al.Electronics Letters. 1986, Vol 22, Num 16, pp 869-870, issn 0013-5194Article

1.5-μm GalnAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structuresTSANG, W. T; BOWERS, J. E; BURKHARDT, E. G et al.Journal of applied physics. 1988, Vol 63, Num 4, pp 1218-1220, issn 0021-8979Article

Novel scalloped-mirror diffraction-coupled InGaAsP/InP buried-heterostructure laser arraysYAP, D; WALPOLE, J. N; LIAU, Z. L et al.Applied physics letters. 1989, Vol 54, Num 8, pp 687-689, issn 0003-6951Article

High-power (cw) in-phase locked «Y» coupled laser arraysWELCH, D. F; CROSS, P. S; SCIFRES, D. R et al.Applied physics letters. 1986, Vol 49, Num 24, pp 1632-1634, issn 0003-6951Article

A proposal of a method for analysing the leakage characteristics of 1.3 μm semiconductor buried heterostructure lasersUMEBU, I.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 63-66, issn 0268-1242Article

Fabrication of buried-heterostructure diode lasers using in situ Mg diffusionMUKAI, S; KANEKO, Y; WATANABE, M et al.Journal of applied physics. 1989, Vol 65, Num 4, pp 1810-1812, issn 0021-8979, 3 p.Article

Planar buried-ridge-structure (PBRS) lasers with emission wavelengths of 1.3 μm and 1.55 μm for optical communication systemsTHULKE, W; ZACH, A; WOLF, H.-D et al.Siemens Forschungs- und Entwicklungsberichte. 1988, Vol 17, Num 1, pp 1-5, issn 0370-9736Article

Defect mechanisms in degradation of 1.3-υm wavelength channeled-substrate buried heterostructure lasersCHU, S. N. G; NAKAHARA, S; TWIGG, M. E et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 611-623, issn 0021-8979Article

High-power high-reliability operation of 1.3-μm p-substrate buried crescent laser diodesNAKAJIMA, Y; HIGUCHI, H; KOKUBO, Y et al.Journal of lightwave technology. 1987, Vol 5, Num 9, pp 1263-1268, issn 0733-8724Article

Lateral far-field interference pattern of buried heterostructure lasersJUNYAPRASERT, K; OGASAWARA, N; ITO, R et al.Japanese journal of applied physics. 1987, Vol 26, Num 8, pp 1279-1284, issn 0021-4922, 1Article

Correlation between degradation and device characteristic changes in InGaAsP/InP buried heterostructure lasersFUKUDA, M; IWANE, G.Journal of applied physics. 1986, Vol 59, Num 4, pp 1031-1037, issn 0021-8979Article

Dynamic characteristics of high speed p-substrate GaInAsP baried crescent lasersNG, W. W; CRAIG, R; YEN, H. W et al.Journal of lightwave technology. 1989, Vol 7, Num 3, pp 560-567, issn 0733-8724, 8 p.Article

Influence of mass-transported layers on threshold current and mode behavior in InGaAsP BH semiconductor lasersGUO CHANGZHI; CHEN SHUILIAN.Chinese physics. 1989, Vol 9, Num 3, pp 848-862, issn 0273-429X, 15 p.Article

Buried heterostructure lasers by silicon implanted, impurity induced disorderingWELCH, D. F; SCIFRES, D. R; CROSS, P. S et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1401-1403, issn 0003-6951Article

Mass transport buried heterostructure laser using p-InP substrateKOENTJORO, S; RAVIKUMARI, K. G; SHIMOMURA, K et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1986, Vol 69, Num 9, pp 920-922, issn 0387-236XArticle

Laser diode incorporating buried etched-void photonic patternGAZULA, D; QUADERY, S; DEPPE, D. G et al.Electronics Letters. 2005, Vol 41, Num 22, pp 1223-1225, issn 0013-5194, 3 p.Article

Effects of lateral confinement on reflectivity of buried heterostructure PbSbTe lasersHANDELMAN, D; HARDY, A; KATZIR, A et al.Applied optics. 1987, Vol 26, Num 1, pp 12-14, issn 0003-6935Article

A dual-wavelength InP channeled-substrate buried-heterostructure laser light-sourceKOSZI, L. A; CHIN, A. K; MINNECI, G et al.Solid-state electronics. 1987, Vol 30, Num 1, pp 39-42, issn 0038-1101Article

Coupled-guide waveguiding in buried-stripe self-aligned lasersGARRETT, B; WHITEAWAY, J. E. A.IEE proceedings. Part J. Optoelectronics. 1987, Vol 134, Num 2, pp 123-126, issn 0267-3932Article

Design and realisation of high-gain 1.5 μm semiconductor TW optical amplifiersBROSSON, P; FERNIER, B; BENOIT, J et al.Electronics Letters. 1987, Vol 23, Num 6, pp 254-256, issn 0013-5194Article

Frequency response of 1.3 μm high speed semiconductor lasersOLSHANSKY, R; HILL, P; LANZISERA, V et al.IEEE journal of quantum electronics. 1987, Vol 23, Num 9, pp 1410-1418, issn 0018-9197Article

Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laserMORI, Y; SHIBATA, J; KAJIWARA, T et al.Applied physics letters. 1987, Vol 51, Num 24, pp 1971-1973, issn 0003-6951Article

Analysis of the parasitic effective capacitance of buried-heterostructure lasersKAMITE, K; YANO, M; TANAHASHI, T et al.Electronics Letters. 1986, Vol 22, Num 8, pp 407-409, issn 0013-5194Article

Effect of active layer thickness on differential quantum efficiency of 1.55 μ InGaAsP buried crescent injection lasersCHENG, W. H; RENNER, D.Applied physics letters. 1986, Vol 49, Num 20, pp 1322-1324, issn 0003-6951Article